碳多孔体中碳化硅晶须原位生长条件的实验与模型研究

INVESTIGATION OF PROCESS PARAMETERS FOR IN-SITU GROWTH OF SiC WHISKERS IN POROUS CARBON BY MEANS OF EXPERIMENT AND MODEL

根据碳化硅晶须生长的特定驱动力要求，通过实验和建立气相传输模型研究了碳多孔体中碳化硅晶须原位生长的条件。模型和实验研究均表明：温度和多孔体表面气相组成对多孔体内的晶须原位生长起决定作用；体内附加巨应可以改变晶须生长所要求的温度和表面气相条件。

According to the specific dynamic requirement for the growth of SiC whiskers, the process pa-rameters for in-situ growth of SiC whiskers in porous carbon were determined by experiment and gas transfer mOdel.Both experimental resuIts and model show that the in-situ whisker growth is greatly dependent on the temperature and gas composition at the surface of porous carbon, and, with additional reaction in the porous car-bon, the process parameters must be changed for the in-situ whisker growth.