ICP－AES法分析Au－Ga合金 　

Inductively Coupled Plasma-Atomic Emission Spectrometry Determination of GoM-Gallium Alloy

研究了用ＩＣＰ─ＡＥＳ法测定高纯Ａｕ─Ｇａ合金中Ｇａ及萃取Ａｕ后测定微量Ｐｔ、Ｐｄ、Ｒｈ、Ｊｒ、Ａｇ等２５个杂质元素的方法。元素间的干扰用等效浓度法校正。杂质元素标准加入回收率为８４～１０３％：相对标准偏差为２．６～１７％，取２．５ｇ样品时测定下限为５×１０￣（－５）～２×１０￣（－４）％。

An ICP-AES method was cstablished for the determination of Ga and impurity elements in Au-Ga alloy,such as platinum, palladium,rhodium,iridium,silver etc, The interference can be corrected by using the equivalent concentration technique,The recovery of the standard addition was found to be 84 to 103%and the relative standard deviation was2.6 to 17%,The detected limit in2.5g samplc varies from 5 × 10￣(-5) to 2 ×10￣(-4)%。