氢氧注入在GaAs器件中的应用

APPLICATIONS OF HYDROGEN AND OXYGEN IMPLANTATION TO THE GaAs DEVICES

从３个器件说明氢、氧注入在不同方面的应用：（１）用氧注入制备高质量Ｎ－ＳＩ－Ｎ＋埋层，应用于源栅面对ＭＥＳＦＥＴ中，克服源、栅、漏引线在同一平面交错带来的工艺及寄生效应；（２）用氢注入隔离Ｐ＋－Ｎ－－Ｎ＋层的Ｎ－层，减小ＨＢＴ的ＢＣ结电容，以提高其高频特性；（３）用氢、氧注入制作平面结构的ＨＰＴ，以减小复合电流，提高光电增益。其中尤其强调了选择离子注入的能量、注量及退火温度。

The hydrogen and oxygen implantation can be used for improving device characteristics.A vatriety of applications such as the real N-SI-N+ buried layer formed by oxy gen implantation,the base-collector capacitance reduced by hydrogen implantation and the sur face combination current decreased by hydrogen and oxygen implantation are mainly discussed.The implanted energy,the implanted doses and the optimum annealing conditions are also discussed.