摘要
研究了５０．８ｍｍ液封直拉非掺杂半绝缘砷化镓单晶中ＡＢ微缺陷的显微特征，率先提出了一种定量表征微缺陷的新方法，揭示了ＡＢ微缺陷在单晶各部位的分布规律。
The microsopic characteristics of AB microdefects in50.8mm LEC undoped semi-insulating GaAs single crystals have been studied.A new method for the quantitative characterization of micro-defects is inaugurated for the first time to date ,and the regular pattern of the AB microdefect distribution of semi-insulating GaAs crystals is revealed.
出处
《兵器材料科学与工程》
CSCD
北大核心
1995年第3期37-41,46,共6页
Ordnance Material Science and Engineering
