摘要
用亚阈技术分析研究了干氧栅氧化期间通入ＨＣｌ所制作的ＰＭＯＳＦＥＴ的６０Ｃｏ辐照响应。结果表明，栅介质中掺入少量ＨＣｌ能抑制辐射感生阈电压漂移和界面态增长；固定ＨＣｌ流量为１５ｍｌ／ｍｉｎ时的最优通入时间范围为１０－１５０ｓ，过量的ＨＣｌ掺入，其抑制辐射损伤的能力减弱或消失。用ＨＣｌ在栅介质中的作用是正负效应的综合，解释了实验结果。
The 60Co γradiation responses of PMOSFET with dry oxidized gate dielectrics containing HCl have been investigated by the sub-threshold measurement technique.It is shown that the use of a minute amount of HCl can bring about a dramatic improvement in the radiation induced threshold voltage shifts and interface states generation.The optimum HCl introducing time is 10-150 seconds when HCl flux keeps constant(15ml/min).An excessive amount of HCl will cause the hardness to degrade.This result is explained in terms of the positive and negative effects of HCl in SiOZ dielectrics.
出处
《核技术》
CAS
CSCD
北大核心
1995年第2期117-120,共4页
Nuclear Techniques
关键词
PMOSFET
电离辐射
总剂量
HCI
Sub-threshold techniques,Threshold voltage,Interface states,PMOSFET,Ionizing radiation
