掺硼和掺磷硅衬底生长SiO_2膜及其电离辐照效应的XPS研究

XPS studies of Si-SiO_2 grown On B-and P-doped single crystal silicon and its^(60)Co irradiation effect

用ＸＰＳ对在掺硼和掺磷硅衬底上生成的Ｓｉ－ＳｉＯ２进行了６０Ｃｏ辐照前后的界面成分分析．结果表明，同一氧化工艺在两种硅衬底上生成的Ｓｉ－ＳｉＯ２，在γ辐照前后其硅的二氧化硅芯态能级谱、Ｓｉ过渡态芯态能级谱及剩余氧态谱均有较大差异；其中，杂质硼比磷对体系在辐照前后的ＸＰＳ谱的影响更大。四种Ｓｉ－ＳｉＯ２的ＸＰＳ分析显示出衬底杂质与氧化工艺在ＳｉＯ２形成过程中具有等同的质量控制作用．根据硼、磷的原子基态时的电子组态及扩散性质的差异对实验结果进行了机制分析．

The Si-SiO2 films prepared on B-and P-doped single crystal Si were studied with XPS before and after 60Co irradiation.The experimental results show that there were remarkable differences in SiO2 state(BE=103.4eV),Si transitional state(BE=101.5eV) and surplus oxygen state(BE=529.6eV) for the two kinds of Si-SiO2 film whether they were irradiated or not,and the influence of B on the XPS spectra was greater than that of P.The XPS spectra analysis indicates that,during the formation of SiO2,the substrate impurity and the oxidation process have equal importance in quality control.Finally,experiment results are discussed from the view points of the electron configuration of atomic ground state and the difference of diffusive feature between B and P.