质子在硅中能量损失的体密度效应的研究

A study of mass density effect on specific energy loss for H￣+ ions in silicon

用能损的二分量理论详细讨论了快速荷电粒子（Ｈ＋）在同素异形态Ｓｉ薄膜中的能量沉积过程．在Ｂｅｔｈｅ－Ｂｌｏｃｈ公式中引入了一个能损修正因子η（Ｅ，ｐ）＜１．由入射粒子在固体中产生传导电子的集体激发（等离子体）和附有修正因子η（Ｅ，Ｐ）的内壳层电子单体电离－激发之和解释能损的同素异形态效应的实验结果，通过对实验数据的拟合，求得η（Ｅ，Ｐ）．

The energy deposition process for swift charged psrticles (H+) in allotropic silicon film is discussed in detail with the two component assumption of energy loss.An energy-loss correction factor η(E,p)< 1 has been introduced into the Bethe-Bloch formula and by fitting the experimental data and the η(E,p) value is obtained. As a result, all of the experimental phenomena on the allotropic effect of energy loss can be explained.