反偏二极管的计算机辅助设计

Computer Aided Desing for Reverse Bias Diodes

利用有限元法解泊松方程，可以得到反偏二极管中的二维电位分布和最大电场强度．模拟结果指出：正斜角二极管中的电场强度小于负斜角二极管中的电场强度，前者的最大电场强度处于反偏二极管的中心，而后者的最大电场强度则处于表面．因此，正斜角二极管可以达到高的反向击穿电压．

The two dimensional potential distribution and the maximum value of electric field in reverse bias diodes can be obtained by the use of Finite Element Method to solve Poisson's equation.The simulation results show that the values of electric field strength in positively bevelled diodes are smaller than that of in negative bevelled ones. The maximum electric field strength for the former one is located at the center, but for the latter,the maximum is at the surface. Thus,high breakdown reverse voltages can be attained on the positively bevelled diodes.