摘要
考虑带有雪崩项的半导体方程组的混合边值问题,采用拟单调方法和逼近过程,通过一系列先验估计,证明了该问题整体弱解的存在性。
This paper is concerned with the drift-diffusion equations of semiconductor theory involvingrecombination-generation of carriers due to particle transition,and pure generation by impact ioniza-tion(avalanche generation).We establish the existence of a weak solution to the mixed boundaryvalue problem for the system of PED’S under consideration,The method of proof combines an ap-proximation argument with some estimates based on a positivity property of the recombination-gen-eration term.
出处
《河南科学》
1995年第4期283-294,共12页
Henan Science
关键词
半导体方程组
雪崩项
混合边值问题
整体弱解
Semicondctor equations Avalanche generation Mixed boundary value problem Global weak solution