n型HgCdTe晶片少子寿命分布的小光点测量

Measurement of Minority Carrier Lifetime Distribution in n-type HgCdTe Wafer with a Small Spot Apparatus

用聚焦的激光光点（宽度约为０．１ｍｍ）测量了ｎ型Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．２）长条状薄片样品的少数载流子寿命沿样品长条方向的分布，结果表明分布是不均匀的。讨论了引起这种不均匀的可能原因。

Lifetime distribution of minority carrier in n-type HgCdTe (x=0.2) has been measured with photoconductive decay technique. The radiation beam from a gallium arsenide laser diode at 5 kHz with 0.9μm wavelength and 200 μs pulses duration was focused into a small spot about 100 μm in diameter on the wafer. Experimental results show that the effective lifetime varies from region to region in the same wafer. Probable reasons for this are given.