低能离子束成结制作10．6μm碲镉汞光伏探测器

ION BEAM INDUCING JUNCTION IN 10.6μm HgCdTe PHOTOVOLTAIC DETEC TOR FABICATION

制作光伏型碲镉汞（ＭＣＴ）探测器ＰＮ结常用的方法是离子注入法。近几年的研究发现，低能离子束成结更适合制作长波光伏型ＭＣＴ探测器。本文报导了低能离子束成结的１０．６μｍ光伏型碲镉汞探测器的性能，衬底为载流子浓度在０．８～６×１０￣（１６）ｃｍ￣（－３）范围的Ｐ型ＭＣＴ材料，离子束能量范围为１００～６００ｅＶ，通过离子束处理，可在Ｐ型ＭＣＴ表面形成一薄层较低载流子浓度的Ｎ型区，而制成ＮＰ结，利用该技术成结制作的大面积、四象限１０．６μｍＭＣＴ探测器，在－２０ｍＶ的偏压，８０Ｋ的温度下，器件的峰值响应率和峰值分别为３２４．５Ｖ／Ｗ和１．１３×１０￣（１０）ｃｍＨｚ￣（１／２）／Ｗ，每元光敏面积为６．８８×１０￣（－３）ｃｍ￣２。

Ion implantation is a common-used technique for fabricating PN junction in MCT Photovoltaic(PV)detector. It is found in recent years that the techuinel is suitable for fabricating long wave MCT PV detector by applying low energy ion beam to PN junction. In this paper, the Perform-ances of 10.6μm MCT PV detectors fabricated in this way are presented.The substrate of the detector emphasized in thie paper is of P-type material with carrier concentraion of 0.8～6×10￣(16)cm￣(-3). After ion beam processing,a thin N laver with low carrier concentration is formed on the surface of th e P-type MCT crystal. It is proved the large area 4-quadrant, 10.6μm MC T detector fabricated in this way has peak resposivity of 345.5 V/W, peak detectivity of 1.13×10￣(10)cmHz￣(1/2) Wata -20mV bias and 80K operating tem-perature. and the sensitive area per single element is 6.88×10￣(-3)cm￣2.