摘要
本文首次报道了采用光激电流瞬态谱（ＰＩＣＴＳ）研究非掺杂半绝缘ＣｄＴｅ的深能级。结果表明，晶体内部的深能级决定着半绝缘材料的电阻率，０．１～０．１９ｅＶ深能级带是决定电阻率高低的重要因素；ＰＩＣＴＳ反映的是晶体内的深能级，与样品（１１１）ＣｄＴｅ的Ａ、Ｂ面和表面光洁度关系不大。
In this paper,it is reported for the first time in China that deep lev-els in undoped semi-insulating CdTe have been investigated by the Photop-In-duced Current Transient Spectroscopy ( PICTS).Upon the test results,it is indicateded that the resistivity of the semi-insulating material is dependent on deep levels in single crystal, and the important factor on which the value of the resistivity is dependent is the 0.1～0.19eV band. Moreover,it is the deep levels in crvstal that have been distributed by the PICTS.and the test result does not have much to do with the A, B face and the finish of the sample.
