Ⅱ－Ⅵ族化合物单晶生长过程中缺陷的形成与控制原理

FOKMATION AND REDUCTION PRINCIPLE OF DEFECTS IF Ⅱ-ⅥCOMPOUND CRYSTALS DURING BULK GROWTH PROCESS

根据晶体生长的基本原理，分析了二元及三元Ⅱ－Ⅵ族化合物在布里奇曼法单晶生长过程中，各种晶体缺陷的形成原因及其与晶体生长条件的关系。在此基础上指出了控制晶体缺陷的思路。

Based o n the crystal growth principles, the formatio n of defects,such as twins,dislocations,subgrain boundaries and point defects,during Bridgman crystal growth of Ⅱ-Ⅵcompounds and its relationship with growth parameters are discussed. On this basi5,the ways to reduce the defects are sug-gested.