温度对Ar^+诱导Au-Si界面原子混合的影响

THE TEMPERATURE EFFECT OF Ar+ INDUCED MIXING AT Au-Si INTERFACES

本文在77至573K温区研究了Ar^+诱导的Au-Si<111>界面的原子混合现象。温度对混合结果有强烈的影响。Q_((S)_i)—T曲线的特征与Cr-Si等体系是不同的;得到了具有确定组份比的Au_(48)Si_(51)(≈AuSi)均匀混合层;T>32℃时,深入到Si中的Au原子呈指数衰减的尾巴,为解释此指数尾巴,提出了填隙原子增强扩散机制及方程。

The present investigation was intended to elucidate the temperature effect and basic mechanism involved in the mixing, at Au-Si interfaces. .The Ar+ induced mixing pf Au-Si system has been studied as. a function of the temperature from 77 upto 573K. The mixing effect has a strong dependence on the temperature during the bombardment. The temperature dependence of intermixed Si atoms(Qsi/cm2) is different from the temperature dependence in the other system like Cr-Si, Ni-Si and V-Si. The well defined lasers with a composition close to Au49Si51(=AuSi)have been observed. When the temperature is higher than 32℃,the Au atoms 1000A below the interface show an exponential distribution. The mechanism and equation of enhanced diffusion of the interstitial atoms have been introduced to explain the exponential distribution.