硫酸石墨层间化合物的溶出伏安行为研究

Quasi Stripping Analysis for Sulfuric Acid-Graphite

用溶出伏安法研究硫酸石墨层间化合物在Ｈ＿２ＳＯ＿４中的慢扫描溶出行为，发现随着中间富集过程的变化其溶出结果呈规律性变化，特别是在１８ｍｏｌ／ＬＮ＿２ＳＯ＿４中，低电位分段富集时，其溶出峰较同电位一次富集的溶出峰要宽和广，这个发现将导致生产出低残余化合物含量的柔性石墨密封材料。

By the means of quasi-stripping analysis,a study of slow linear sweephas been applied to the H_2SO_4-GIC,prepared by anodic oxidation forgraphite in sulfuricionization. Different stripping results are found on the condition of changing interpre-electrolysis steps,specially in the low potential,the stripping peak is broadened.Thecan make people to product flexible graphite with low residual compoud.