摘要
研究了等离子体增强化学气相淀积（ＰＥＣＶＤ）法制备ＳｉＯｘＮｙ膜工艺中混合气体配比与薄膜中氮、氧含量间的变化关系以及对膜层折射率、介电常数的影响。同时，对研制成的薄膜的ＭＩＳ（金属－绝缘层－半导体）结构进行了电学测试，探讨了膜层中氮、氧含量变化对薄膜电学特性（界面态、固定电荷、平带电压漂移）的影响。
The relationship between the reactant mixture gas used to produce SiOxNy film by PECVD method and the composition, refractive index and electric inductivity of the film is investigated. Furthermore, MIS structure is fabricated and tested by high-frequency C-V and quasi-static C-V measurement, in order to study how the electrical characteristics (the fixed charge density, interface state density and flatband voltage shift) of the MIS structure influenced by the composition of the SiOxNy film.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1995年第12期95-98,共4页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
关键词
介质膜
电学性质
半导体
PECVD法
氮氧化硅
薄膜
plasma enhanced chemical vapour deposition (PECVD )
dielectric film
electrical characteristic
reactant mixture gas
composition of the film
