用俄歇能谱研究热氮化SiO_2膜中氮原子的扩散

A STUDY ON THE NITROGEN DIFFUSION IN THE THERMAL NITRIDATION SiO_2 FILM WITH AUGER ES

应用俄歇电子能谱仪，对快速热氮化法制备的热氮化二氧化硅（ＲＴＮＳｉＯ２）薄膜及快速热氮化后再氧化退火的二氧化硅（ＰＮＡＳｉＯ２）薄膜，进行元素深度分布剖析。薄膜厚度约为６０ｎｍ。分析结果发现；１）氮原子在二氧化硅薄膜中的扩散范围受氧原子浓度的控制；２）热氮化二氧化硅薄膜经氧化退火处理后，氮原子浓度降低，分布变得平缓、均匀。

The Auger electron spectrometer (AES) is used to study the element depth Profile of rapid thermal nitridation SiO2 (RTN SiO2) film and jpost oxidation annealing SiO2 (PNA SiO2) film. The film thickness is about 60 nm. It is discovered that; 1) The diffusion area of the nitrogen in the SiO2 film is controlled by the oxygen content of the film, beside RTN time, temperature and film thickness, In the state of rich oxygen of SiO2 film theOtherwise is the state of lacking oxygen of SiO2 film, nitrogen diffusion is widely in the Layer, but concentration is lower and more uniform. 2)After the RTN SiO2 film is treatd by Post oxidation annealing, the nitrogen content decreases and the distribution becomes more uniform.