一种简单多极磁约束的反应离子刻蚀装置的研究

A STUDY OF A SIMPLE REACTIVE ION ETCHING (RIE) APPARATUS WITH A MAGNETIC MULTIPOLE CONTAINMENT

本文叙述了多极磁约束的反应离子刻蚀装置。该装置具有结构简单，低损伤和各向异性刻蚀的优点。在射频率为１００ｗ，工作压强为１．３３（０．０１～１０）Ｐａ的氩气氛中，典型的离子密度为（１．０～１．５）×１０（１０）ｃｍ（－３），电子温度为１．９～４．１ｅＶ，等离子体电位１０—５０Ｖ，有磁场的离子密度比没有磁场的离子密度大几个数量级。它是一种具有广泛应用前景的等离子刻蚀装置。

A simple RIE apparatus is discribed with magnetic multipole containment in this paper.It has advantages of sample structure, low damage and anisotropic etching.At an RF power of 100W and a pressure of 1.33 (0.01～10)Pa? in argon, the ion density is typically(1.0 ～ 1.5 )X1010 cm-3,the electron temperature 1. 9～4.1 eV,the plasma potential10～50 V. The ion density with magnetic field is several fold greater than that without magnetic field. It is the plasma apparatus which has practical use and a bright future.