摘要
提出一种结构新颖的硅扩展电阻温度传感器，这种传感器与硅平面加工技术兼容，易于集成化。当传感器在２ｍＡ的正向偏置电流下，由于少数载流子的不连续性以及多数载流子的注入，传感器电阻的正温度系数（ＰＴＣ）区拓宽到５７３Ｋ（＋３００℃）以上。本文探讨了传感器的图形设计理论和电阻－温度关系，与实验结果吻合。这种ＳＲＴ传感器在温度和流速检测中将得到广泛应用。
This paper presents a novel structure of silicon spreading resistance temperature (SRT) sensor which is compatible with the mono-integrated circuit planar process and easily integrated. When the sensor is forward biased at a current of 2 mA, the range of positive temperature coefficient of the sensor resistance is extended up to +300 C as a result of the minority current discontinuity and majority carrier injection. Theories for the geometrical design and resistance-temperature dependencies of the sensor were developed and were found to agree well with the experimental results. This SRT sensor will find wide application in the detection of temperature and flow velocity.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1995年第12期1-8,共8页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
广东省自然科学基金
关键词
硅
温度传感器
正温度系数
扩展电阻
检测
silicon
temperature sensor
positive temperature coefficient
spreading resistance
