PECVD法低温制备富氮的SiO_xN_y栅介质膜及其特性

NITROGEN-RICH SiO_xN_y GATE DIELECTRIC FILM PREPARATION BY LOW TEMPERATURE PECVD METHOD AND ITS CHARACTERISTICS

在ＰＥＣＶＤ法低温制备优质薄膜技术中，改变衬底温度、反应室气压、混合气体组份，运用退火致密工艺，制备富氮的ＳｉＯｘＮｙ栅介质膜样品。采用准静态Ｃ－Ｖ和高频Ｃ－Ｖ特性测试、俄歇电子能谱分析、椭偏谱仪检测、Ｉ－Ｖ特性测试，研究了该薄膜的电学、光学特性；探讨多种工艺制备条件对膜特性的影响，同时给出了制备该膜最优化工艺条件。经测定，用这种工艺条件制成膜的特性参数已达到或接近热生长ＳｉＯ２栅介质膜的水平。

In technique of low temperature PECVD method to prepare high quality film,nitrogen-rich SiOxNy gate dielectric film samples have been fabricated by changing substrate temperature, plasma reactor pressure and mixture gas composition with anneal densification processing. The electrical and optical characteristics of the thin film were studied by the measurements of quasi-static C-V alld high frequency C-V characteristics, the Auger electron spectroscopy depth profiling, the spectroscopic ellipsometry and I-V characteristic analysis.The effects of the process fabrication conditions on film characteristics were probed into. The research results gave that the finest process condition to fabricate the film, and obtained that the characteristics of the film fabricated by the finest condition have achieved or approached those of the thermal growing SiO2 dielectric film.