氯化铜溶液中多孔硅光致发光猝灭

A Study on the Photoluminescence of Porous Silicon in Copper Chloride Solution

研究氯化铜溶液中多孔硅光致发光猝灭的机制．瞬态光致发光和傅里叶变换红外光谱表明钢－多孔硅界面电子态提供了非辐射复合的途径．

A study is made on the photoluminescence quenching of porous silicon in copper chloride solution,laying emphasis on the mec anism. As shown by transient photoluminescence and ourier-transform infrared absorption, the localized electronic state at Cu/porous silicon interface provides a way of nonradiative recombination.