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(MgCoNi)O系氧敏材料的高温电导机理研究

On the Conduction Mechanism at High Temperature of (MgCoNi)O-System Oxygen-Sensitive Materials
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摘要 研究了(MgCoNi)O系氧敏材料的高温电导同氧分压的关系。结果表明材料中NiO含量对电导与氧分压的关系曲线具有显著的影响,通常材料的电导机理可由理想缺陷模型加以解释,然而,当材料在某一特定组分时材料的电导最大,且基本上不随外界氧分压的变化而变化,此时,运用电子跳跃电导模型和Mott窄带模型进行解释是合适的。 The relationship between high temperature conduction of(MgCoNi )O-system oxygen-sensitive materials and oxygen partial pressure is studied.It is shown that the influence ofthe NiO content in the(MgCoNi) O materials is significant.The conduction mechanism isusually interpreted by the ideal defect model.For a specific material composition,however,the conductivity of the material is a maximum and is insensitive to the variation of the oxygenpartial pressure,and X-ray diffraction analysis also shows that the lattice constant is mini-mum for the same specific composition, which deviate from the Vigard's Law. It is now ap-propriate to explain these phenomena with the electron hopping model of conduction andMott's narrow-band model.
出处 《华中理工大学学报》 CSCD 北大核心 1995年第3期57-60,共4页 Journal of Huazhong University of Science and Technology
关键词 氧敏材料 电导激活能 陶瓷 电导率 半导体 oxygen-sensitive materials electron hopping model of conduction narrow-band model activation energy of conduction
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参考文献2

  • 1周东祥,华中理工大学学报,1994年,22卷,增刊,107页
  • 2徐毓龙,氧化物与化合物半导体基础,1991年

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