摘要
本文研究了间接带隙半导体ＡｇＢｒ由于空间尺寸的限制产生的吸收、荧光兰移，激子振子强度增强的量子尺寸效应．观察到由自旋－轨道分裂带至导带的２８４ｕｍ吸收峰．经硫处理的ＡｇＢｒ直接激子吸收峰从３１０ｕｍ移至３０１ｎｍ．相应的荧光从３４０ｎｍ移至３２４ｎｍ．同时在８５０ｎｍ处产生了一新的荧光带．
Abstract The absorption and fluorescence bine shift as well as the oscillator strength enhancement of indirect gap semiconductor AgBr due to the confined spatial range of electron and hole were studied. The absorption peak of spin-orbit splitting band was observed at 284nm. The direct exition absorption and fluorescence of AgBr-Ag2S shifted from 310 and 34onm to 301 and 324nm respectively. A new fluorescence band at 850nm was measured.
基金
国家自然科学基金
