一种无定形SiO_2上沉积含氢的非晶硅氧改善硅平面管特性的方法

A-Si:(H,O) Was Deposited on SiO2 for Improving the Transistor Characteristics

本文报导的是在无定形SiO_2上沉积含氢的非晶硅氧修复特性较差的硅平面管的方法,该方法可使特性较差的管子起死回生。

In this paper,we suggest a method for improving the characteristic of transistor which have so bad properties that can't be use and by this method,i.e. a-Si:(H,O) is deposited on SiO2,the bad one can become into good.