摘要
对Ｈｇ１－ｘＣｄｘＴｅ（ＨＣＴ）晶体表面上由电化学阳极化生长的氧化膜进行了俄歇电子能谱（ＡＥＳ）分析，并经Ａｒ＋离子蚀刻，研究了薄膜及其与底晶的界面层的深度元素分布和化学计量，估计了可能生成的化合物，阐述了阳极化过程中电流密度，槽电压及电解质溶液浓度对阳极化膜的ＡＥＳ的影响．
Abstract Auger Electron Spetra (AES) study is carried out with the anodic film on Hg1-xCdxTe, x～0.21(HCT), crystal. The depth profilc and stoichiometry or clements with in both the filmandthe interface with the HCT substrate are measured by means of Ar+ ion sputtering. Influences of current density,and potential,as well as electrolyte concentration during anodic process arc illustrated on the AES of the film.
