摘要
本文应用唯象方法，对面心立方晶体的（１１１）面上的显微电化学蚀坑作分形几何分析。提出晶面缺陷的复制侵蚀势概念。此势具有类Ｓｉｅｒｐｉｎｓｋｉ垫结构的自相似复制特征。最后将所得理论结果与红外材料Ｃｄ１－ｘＺｎｘＴｅ晶体的（１１１）面上的电化学蚀坑形貌观察实验结果比较，符合甚好。
AbstractIn this paper, the replipotential concept of etch pits on(111) surface of face-central cubic system, is presented by phenomenological method. The concept is reduplicated etch pits of crystal defect. The replipotentinl has reduplicated properties of self-similsr by Sierpinski gasket. This method is used to analyses fractal gevmetric characters of microscopy of electrochemistrical etch pits on(111) surface of facecentral cubic system.Finally, in order to compare it with the experimental study, on the microstructure of Cd1-xZnxTe crystal by scanning electron microscopy,the theoritical result is in accord with the elch pits on surface of [111] direction.
基金
云南省应用基础基金
