摘要
本文运用STM及SEM确定处理固相离子传导的基体形状为球形;用改进的GITT方法(间隙库仑滴定法)计算了离子的扩散系数,在10^(-10)~10^(-12)cm^2·s^(-1)量级;运用XPS方法证明了界面的部分电荷转移,建立了阴离子(ClO_4^-)在导电聚合物(聚噻吩)中的电化学嵌入反应的动力学表达式.将上述模型应用于ClO_4^-在聚噻吩(PT)对中的嵌入反应.所得结果表明,在脱嵌态聚噻吩的交换电流很小,与它的半导体性质一致.同时,α+β<1,再次证明了界面的部分电荷转移.
With STM and SEM, spherical partical electrode model was established for solving solid state ionic diffusion problem. A modified GITT method was introduced to estimate D to be 10-10 to 10-11 cm2·S-1. A partial charge transfer across the interface was determined with XPS study and a kinetic equation was given. The model was applied to ClO4 intercalation into polythiophene. Coincide with the semiconductor · property, the exchange current of deintercalated polythiophene was very low while α+β<1. It further proved the partial charge transfer model.
出处
《化学学报》
SCIE
CAS
CSCD
北大核心
1995年第7期677-682,共6页
Acta Chimica Sinica
基金
国家自然科学基金资助课题