3P W Kruse,R K Willardson,A C Beer. Semiconductors and semimetals [ M ]. London: Academic Press, 1981 : 1 - 20.
4俞福堂.红外技术原理手册[M].北京:国防工业出版社,1978.
5Mikhail VLebedev, Masaru Shimomura. Chemical analysis of a sulfur-treated InSb( 111 ) A surface by XPS [ J ]. Sur- face and interface analysis,2010,42:791 -794.
6Dmitry MZhernokletov, Hong Dong, Barry Brennan, et al. Optimization of the ammonium sulfide (NH4) 2S passiva- tion process on InSb( 111 )A [ J ]. Journal of Vacuum Sci- ence & Technology ,2012,30 (4) :04E103 - 04E103 - 7.
7Hongyi Su, Weiguo Sun. Effect of the OH ions on SiO2/ SPG/SiO2/InSb device stability [ J ]. SPIE Proceedings, 1994,2274 : 181 - 186.
8R K Willardson,A C Beer. Infrared detector [ M ]. Lon- don: Academic Press, 1970 : 14 - 15.
9R J Egan,V W L Chin,K S A Butcher, et al. Hydrogena- tion passivation of acceptors in MOCVD grown p-InSb [ J ]. Solid State Communications, 1996, 98 ( 8 ) : 751 - 754.
