摘要
采用准分子激光诱导ＣＶＤ淀积ＳｎＯ＿２透明导电薄膜，并在其生长过程中进行掺杂Ｓｂ的实验，研究了薄膜生长速率及薄膜电阻率与激光能量密度的关系，得到了电阻率为１．４９×１０￣（－３）Ω·ｃｍ的高质量的ＳｎＯ＿２薄膜。
Transparent electrically conducting SnO_2 thin film was prepared by excimer laser inducedCVD, and Sb was doped in the thin film during the growth experiment.The variation of the growthrate and the resistivity of the thin film with the energy density of the excimer laser had also been stud-ied.The thin film thus produced has a resistivity of 1.49 × 10￣(-3)Ω· cm and better a quality than be-fore.
出处
《吉林大学自然科学学报》
CAS
CSCD
1995年第4期71-73,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
国家863项目资助课题
