n-σ型电荷转移络合物电子光谱的结构效应

Structural Effect for Electronic Spectrum of n-σ Charge Transfer Complex

从结构效应的角度来研究电荷转移络合物的电子吸收光谱,发现n—σ类型的电荷转移络合物其电子吸收光谱的能量与给体中心原子上所联接的基团的诱导效应指数Ⅰ_R,之间,有良好的线性关系。应用文献中的光谱数据,并用蒋一戴公式计算给体中心原子上所联基团的诱导效应指数,研究了9个系列的电荷转移络合物,其电子吸收光谱的能量与诱导效应指数间的相关系数均在0.94以上。

In researching the electronic spectrum of CT complex from the point of view of structural effect, it has been found that there is a good linear relationship between the energy of spectrum and the inductive index of groups attached to central atom of donor in n-σ CT complex. Using the electronic spectrum data in literature and calculating the inductive index of groups attached to central atom of donor by Chiang-Dai formula to investigate 9 series of CT complexes, it has been found that the relative coefficients for all series are greater than 0.94.