偏压类型对磁过滤等离子体制备优质类金刚石膜的影响

Effect of substrate bias on high quality DLC films deposited by filtered cathode arc plasma

采用自行研制的磁过滤等离子体装置在单晶Si基底上制备了优质类金刚石(DLC)薄膜。运用红外光谱(IR)、扫描电镜(SEM),原子力显微镜(AFM)和纳米压痕仪对样品进行了表征和分析,着重研究了衬底偏压类型对制备薄膜的影响。结果表明:在无偏压或周期性负偏压下制备的DLC薄膜的sp3含量比连续负偏压下制备的薄膜的sp3含量要高;同时在周期性偏压下制备的薄膜表面较光滑,其表面粗糙度仅为0.1nm,sp3含量达到66.8%,相应的纳米硬度也较高(达到80GPa)。同时对相应的成膜机理进行了讨论。

High quality DLC films were fabricated on the single crystal Si substrate by using filtered cathode arc plasma self-developed. IR, SEM, TEM and nano-indenter were employed to eharacterize the DLC films. Specially the effects of the bias types on the properties of the films were studied. The research results show that the sp^3 content of the DLC films deposited under no or periodic negative bias is higher than that under the continue negative bias. At the same time, the DLC film deposited at periodic bias is of smoother surface with roughness of 0.1 nm, high sp^3 content of 66.8%, and higher hardness of 80 GPa. The mechanism for depositing the DLC films was also discussed in detail.