摘要
The stress and strain fields in self-organized growth coherent quantum dots （QD） structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can he directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.
利用有限元法对应变自组织生长量子点的应力应变分布进行了系统分析.给出了抽象的孤立量子点系统模型,采用有限元分析方法,利用二维和三维模型对透镜形的量子点内部及周围材料的应力应变进行了计算,计算结果可以直接应用于量子点应变场对导带和价带限制势以及载流子有效质量的影响,从而用于精确计算量子点的电子结构.
基金
国家重点基础研究发展计划(批准号:2003CB314901)
国家高技术研究发展计划(批准号:2003AA311070)
集成光电子学国家重点联合实验室开放课题资助项目~~
