金属结单电子晶体管的模型建立及实验验证(英文)

A Model of a Single Electron Transistor of Metallic Tunneling Junctions and Its Validation

在正统理论的基础上,使用主方程法建立了金属结单电子晶体管的器件模型和算法流程.将电容、电阻和温度等参数代入器件模型得到的I V特性曲线与实验结果吻合较好,从而验证了模型、算法以及程序流程的正确性.此外,通过详细讨论模拟与实验的三组曲线差别,得到模型使用主方程的稳态解是导致模拟与实验之间结果存在差别的主要原因,即求解含有时间的主方程将增加模拟精度;而且,指出镜像电荷引起的电势使电流随电压呈现指数增加的主要影响因素,明显偏离理论模拟的线性增加趋势.

Based on the orthodox theory,a model of a single electron transistor （SET） of metallic tunneling junctions is built using the master equation method. Several parameters of the device, such as capacitance, resistance and temperature,are input into the model and thus the I-V curves are attained. These curves are consistent with those from other experiments; therefore, the model is verified. However, there still exists a difference between simulated results and experimental results,mainly comes from the stationary case of the master equation. In other words, precision of simulated results would be increased if the transient case of the master equation is considered. Moreover, the current increases exponentially at higher drain voltages, which is due to the fact that the barrier suppression is caused by the image charge potential.