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CMOS兼容电容型湿度传感器的理论模型 被引量:2

A Theoretical Model for a Capacitive Humidity Sensor Compatible with CMOS Technology
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摘要 对一种与CMOS工艺兼容的电容型湿度传感器进行了理论推导,物理建模和模拟仿真.该湿度传感器是采用梳状铝电极结构,聚酰亚胺作为感湿介质.通过分析感湿介质的介电常数吸附水分后的变化,考虑其电场分布,对电容型湿度传感器的理论模型进行了研究和模拟.利用Matlab软件对理论模型进行仿真,结果表明所建模型比通常采用的Laconte模型更符合实验结果. A capacitive humidity sensor compatible with CMOS technology is theoretically deduced. Its physical model is built and simulated. It uses comb electrodes and polyimide as moisture sensing material. The dielectric constant change of moisture sensing material due to absorption of water is analyzed. Based on the electric field distribution, the theoretical model of the capacitive humidity sensor is analyzed. The Matlab simulation results show that our model is more in agreement with experiment results than Laconte's model.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第7期1374-1378,共5页 半导体学报(英文版)
基金 国家高技术研究发展计划资助项目(批准号:2002AA404010)~~
关键词 湿度传感器 电容 介电常数 聚酰亚胺 灵敏度 humidity sensor capacitor dielectric constant polyimide sensitivity
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参考文献8

  • 1Qiu Y Y, Azeredo-Leme C, Alcacer L R, et al. A CMOS humidity sensor with on-chip calibration. Sensors and Actuators, 2001,92(2) :80.
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二级参考文献4

  • 1[1]O'Halloran G M,Sarro P M,Groeneweg J,et al.A bulk micromachined humidity sensor bases on porous silicon.IEEE Transducers'97,1997:563
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