摘要
利用注硅固相外延的方法对0.2μmSOS薄硅膜材料进行改性,并制作了单管pMOSFET,nMOSFET及54HC04电路.测量了单管的迁移率,并对样品进行了瞬态辐射实验和总剂量辐射实验,发现用改性后的SOS薄硅膜材料制作的电路,不仅具有同标准0.5μmSOS材料制作的电路相当的动态特性,而且具有很好的抗瞬态辐射能力,并且其抗总剂量辐射能力也达到了很高的水平.
0.2μm thin SOS film is modified by solid phase epitaxy using Si implantation, pMOS and nMOS devices and a 54HC04 circuit are manufactured by the films. The DC characteristics of CMOS devices are measured,and the transient irradiation and total dose irradiation tests are put up. The integrated circuits fabricated by the modified thin SOS film show not only relatively good dynamic characteristics similar to those of standard 0.51μm SOS material, but also excellent transient irradiation hardened performance. The total dose irradiation hardened ability also reaches a very high level.
关键词
固相外延
改性
SOS薄硅膜
CMOS器件
solid phase epitaxy
modification
SOS thin silicon film
CMOS devices
