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低能离子注入和UV照射白色链霉菌的生物学效应 被引量:8

Biological effects of N+ ion implantation and UV radiation on Streptomyces albus
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摘要 低能离子注入和UV辐射经真空处理的白色链霉菌均表现出了复杂的生物学效应。探讨了低能离子注入白色链霉菌产生的“马鞍型”注量效应曲线的形成原因。实验结果表明真空因素不是“马鞍型”注量效应曲线形成的原因,推测“马鞍型”注量效应曲线是低剂量辐射产生的HRS/IRR效应。低剂量UV辐照经真空处理的白色链霉菌仅能表现出IRR效应,同时也表现出兴奋效应(存活率>100%)。以抗链霉素突变为指标研究低能离子注入和UV辐射白色链霉菌的诱变效果的结果表明,UV是致白色链霉菌产生抗链霉素突变的有效手段。 The results of bothplicate biological effects. The30 keV N^+ ion implantation and UV irradiation of Streptomyces albus showed complicate biological effects. The “saddle shape” pattern of the dose -dependent curve formed by N^+ ion implantation with low energy was studied, and it proved that vacuum was not the reason, and in fact, the “saddle shape”curve may be regarded as a HRS/IRR (hyper-radiosensitivity / increased radiaoresistance) effect caused by low dose irradiation.But Streptomyces albus UV irradiated after vacuum treatment only showed IRR effect or hormesis (survival rate 〉100%). The streptomycin resistance mutation of Streptomyces albus caused by low energy N^+ ion implantation and UV irradiation was also studied. The results showed that UV radiation is one effective means for streptomyces albus breeding.
出处 《核技术》 EI CAS CSCD 北大核心 2005年第8期598-602,共5页 Nuclear Techniques
关键词 离子注入 UV照射 突变 兴奋效应 HRS/IRR效应 Ion implantation, UV irradiation, Mutation, Hormesis, HRS/IRR effect
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