摘要
根据对Ag2S-Ga2S3赝二元相图的分析,采用同成分点配料,分别采用一种新方法———两温区气相输运温度振荡法和普通气相输运法合成AgGaS2多晶材料。通过XRD对合成AgGaS2多晶的分析,结果发现:新方法合成的原料纯度及均匀性优于普通气相输运法合成的样品。晶体生长实验表明:新方法合成的AgGaS2多晶材料生长出的单晶外观完整、无裂纹,红外透过率达67%,而普通气相输运法合成的多晶材料生长出的单晶体红外透过率36%。因此,两温区气相输运温度振荡法是合成高质量AgGaS2多晶材料的一种较好的新方法。
According to AgaS- Ga2S3 pseudobinary phasemelt composition were synthesized by a new method, i.e.diagram, AgGaS2 polycrystalline materials with the congruent vapor transporting method with two-zone temperature oscillation, and generic vapor transporting method respectively. XRD results showed that the purity and unifonnity of AgGaS2 polycrystalline materials synthesized by the new method was superior to that synthesized by generic method. The integral and crack-free AgGaS2 single crystal was obtained by modified Bridgrnan method with polycrystalline materials synthesized by the new method. And the infrared transmittance of it was 67 % and, comparatively, that of single crystal grown with polycrystalline materials synthesized by generic method was only 36%. The results indicated that the vapor transporting method with two-zone temperature oscillation was preferable for synthesizing high-quality AgGaS2 polycrystalline materials.
出处
《四川大学学报(工程科学版)》
EI
CAS
CSCD
北大核心
2005年第4期73-76,共4页
Journal of Sichuan University (Engineering Science Edition)
关键词
硫镓银
多晶合成
两温区
气相输运
温度振荡
AgGaS2
polycrystalline material synthesis
two-zone temperature
vapor transporting
temperature oscillation