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铅-碘化铅熔体分层及其应用研究 被引量：2

The Immiscibility between Pb and PbI_2 Melts and its Applications
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摘要 在合成碘化铅(PbI2)多晶原料和生长PbI2单晶体的过程中,观察到了熔体分层现象,提出了Pb-I相图的修正形式,并据此提出了用富铅原料生长PbI2单晶体的新方法,生长出了性能较好的PbI2单晶体。 The immiscibility between Pb and PbI2 melts in the combining process of starting material has been observed in this paper, so the modified Pb-I2 phase diagram has been proposed, and a new method has been suggested that PbI2 single crystal can be prepared from the starting material with excess Pb, further more, PbI2 single crystal with better quality has been obtained.
作者 张伟 朱兴华 李建防 杨晓龙
机构地区 广东工业大学应用物理系 西华大学应用物理研究所
出处 《西华大学学报（自然科学版）》 CAS 2005年第4期8-9,27,共3页 Journal of Xihua University:Natural Science Edition
关键词 PbI2晶体 液相分层 垂直布里奇曼法 晶体生长 immiscibility of melts vertical bridgman method PbI2 single crystal crystal growth
分类号 TN304.2 [电子电信—物理电子学] O782 [理学—晶体学]
  • 相关文献

参考文献7

  • 1T. Shoji, K. Ohba, T. Suehiro, and Y. Hiratate, Characterization of PbI2 Radiation Detectors Using the Response of α-rays[J].IEEE Trans. Nuc. Sci., 1994, 41(4):694-697.
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  • 5朱兴华,赵北君,朱世富,金应荣,赵欣,杨晓龙.碘化铅(PbI_2)单晶体的生长研究[J].人工晶体学报,2005,34(1):25-28. 被引量：7
  • 6R. J. M. Konings, A. Kok-Scheele, E. H. P. Cordfunke, On the phase diagrams of the systems Pb-PbI2, PbI2-NaI and PbI2-ZnI2[J]. Thermochemica Acta, 1995, 261, 221-225.
  • 7赵欣,朱兴华,杨晓龙,金应荣.碘化铅多晶合成与单晶体生长研究[J].西华大学学报（自然科学版）,2004,23(S1):253-255. 被引量：2

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共引文献6

同被引文献22

  • 1朱兴华,赵北君,朱世富,金应荣,赵欣,杨晓龙.碘化铅(PbI_2)单晶体的生长研究[J].人工晶体学报,2005,34(1):25-28. 被引量：7
  • 2[1]M.M.Hamada,I.B.Oliveira,M.J.Armelin,et al,Trace Impurities Analysis Determined by Neutron Activation in the PbI2 Crystal Semiconductor[J].Nucl.Instr.and Meth.,2003,A505:517-520.
  • 3[2]R.Ahuja,H.Arwin,A.F.Silva,et al,Electronic and Optical Properties of Lead Iodide[J],J.Appl Phys.,2002,92(12):7219-7224.
  • 4[3]T.Shoji,K.Ohba,T.Suehiro,et al,Characterization of PbI2 Radiation Detectors Using the Response of α-rays[J].IEEE Trans.Nuc.Sci.,1994,41 (4):694-697.
  • 5[4]J.C.Lund,K.S.Shah.,M.R.Squillante,et al,Properties of Lead Iodide Semiconductor Detectors[J],Nuc.Instr.and Meth.,1989,A283:299-302.
  • 6[6]T.Shoji,K.Ohba,T.Suehiro,et al.Fabrication of Radiation Detectors Using PbI2 Crystal[J].IEEE Trans.on Nucl.Sci.,1995,NS-42(4):659-660.
  • 7[7]X.H.Zhu,B.J.Zhao,S.F.Zhu,et al,Synthesis and Characterization of PbI2 Polycrystals[J],Cryst.Res.Technol.2006,41:239-242.
  • 8[8]T.Shoji,K.Hitomi et al.Fabrication of Radiation Detectors Using PbI2 Crystal and its Response Characteristics for Gamma-rays[J],IEEE Trans.on Nucl.Sci.,1998,NS-45(3):581-584.
  • 9[9]T.Shoji,K.Sakamoto,K.Ohba et al.Characterization of the PbI2 Crystal as a Material for Radiation Detectors[J],IEEE Trans.on Nucl.Sci.,1997,NS-23:25-28.
  • 10[10]I.V.Kurilo,O.V.Rybak,Effect of Growth Conditions on the Morphology and Structural Perfection of Vapor-Grown PbI2Crystals[J],Inorg.Mat.,2002,38(3):362-365.

引证文献2

二级引证文献3

西华大学学报（自然科学版）
2005年 第4期

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