LEC法GaAs单晶生长中热应力分布研究

Thermal Stress Calculation of GaAs Crystal in LEC Growth Configuration

采用有限元法对LEC法生长的3英寸GaAs单晶中的热应力进行求解。假设晶体为轴对称的各向同性线弹性体。主要讨论了不同液封厚度、轴向磁场强度以及晶体转速下的流动和传热所对应的晶体中的热应力分布,同时也考察了界面形状对应力的影响。

The stress distribution of 3 in， （0.075m） diameter single-crystal GaAs by Liquid Encapsulation Czochralski （LEC） method has been calculated with finite element numerical methods. It has been assumed that crystal was in a pseudosteady axisymmetric state with isotropic linearly elastic body, In accordance with different flow and heat transfer under the effect of boron oxide thickness, axial magnetic field strength as well as the rotation of crystal, the thermal stress distribution in the crystal has been calculated，meanwhile the effect of the solid/liquid interface shape has been considered。