热蒸发铜粉法制备硅纳米线的研究

Synthesis of Silicon Nanowires by Thermally Evaporating Copper Powders

研究发现,热蒸发铜粉即可在硅衬底上直接生长出硅纳米线。场发射电子扫描电镜和透射电镜分析表明,纳米线的形貌、结构及生长机制,随沉积区域的不同而变化。在高温沉积区,硅纳米线高度弯曲且相互缠绕,按气-液-固机制生长;在低温沉积区,高度定向生长的直硅纳米线,规整地排列在硅衬底表面,其生长机制是氧化辅助生长机制。

A new method to synthesize silicon nanowires （SiNWs） by means of thermally evaporating copper powders is reported in this paper. Using Field Emission SEM （FE-SEM） and TEM, the as-grown products have been analyzed. The results reveal that the morphology, microstructure and growth mechanism vary with the deposition area of SiNWs. In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS（Vapor-Liquid-Solid） mechanism, have been obtained. However, in lower temperature deposition area, straight and highly oriented SiNWs regularly distributed on Si substrate, and its growth mechanism is the OG （oxide - assisted growth） mechanism。