摘要
本文采用热解化学气相沉积方法,以甲烷和氢的混合气体为原料,在单晶硅和锗、 铜、钼、石英玻璃、碳化钨和石墨基板上合成金刚石薄膜,而且在单晶硅基板上合成出其面积大于20×20mm2的比较均匀的金刚石膜,同时对金刚石膜的生长特性进行了研 究。
The diamond thin films have been synthesized on St,Ge, Cu, Mo, WC and graphite substrates with thermal CVD from mixture gaseous of CH4, and H2, and polycrystalline diamond films with an area of more than 20 X 20 mm2, and growth features of diamond thin film is studied.
出处
《真空》
CAS
北大核心
1989年第3期22-29,共8页
Vacuum