基体偏压和反应气体分压强对溅射导电膜电阻率的影响

The Resistivity of Sputtering Conducting Thin Film Affected by Bias Voltage of Base and Reaction Gas Partial Pressure

本文就基体偏压和反应气体分压强对溅射导电膜电阻率的影响作了理论分析，得到 了理论公式及变化曲线，给出了用三极溅射制得的氧化铟锡（简称ＩＴＯ）透明导电膜的 电阻率随基体偏压和氧分压强变化的实验结果。并就理论曲线和实验曲线进行了比较。

This paper have theoretically analysed the resistivity of sputtering conducting thin film affected by bias voltage of base and reaction gas partial pressure. We have got theoretical formula, changed curve and experiment result that the resistivity changes with bias voltage of base and reaction gas partial pressure. The ITO transparent conduct film was prepared with triterminal sputtering method.