SOI自对准硅化钛工艺研究

The Research on the Process of SOI Self-Aligned TiSi_2

阐述了SOI硅化钛的相关问题,采用两步快速热退火工艺形成低电阻的TiSi2,通过实验得出2次快速热退火的最佳时间和温度,形成良好的SOI自对准硅化钛工艺.

Some questions are discussed about SOI and TiSi2. Through the process of two - step rapid thermal annealing low resistance TiSi2 is formed. The optimal time and the temperature of two - step RTA are obtained, whrch forms the good process conditions of SOI self- aligned TiSi2.