10Gbit/s 0.18μm CMOS激光驱动器的集成电路

10Gbit/s 0.18μm CMOS laser diode driver IC

为了得到低电压、低功耗、高速率的激光驱动器电路,采用0.18μmCMOS工艺设计了10Gbit/s的激光驱动器集成芯片.电路的核心单元为两级直接耦合的差分放大器和电流输出电路.为扩展带宽、降低功耗,电路中采用了并联峰化技术和放大级直接耦合技术,整个芯片面积为0.94mm×1.25mm.经测试,该芯片在1.7V电源电压时,最高可工作在11Gbit/s的速率上;当输入10Gbit/s、单端峰峰值为0.3V的信号时,在50Ω负载上的输出电压摆幅超过1.7V,电路功耗约为77.4mW.进一步优化后,该电路可适用于STM64系统.

To get low power consume and high speed, a chip design of laser diode driver circuit using 10 Gbit/s 0. 18 μm CMOS （complementary-metal-oxide-semiconductor） technology is presented. Employing directly-coupled two stages of differential amplifiers, the circuit can amplify the input differential signal amplitude from 0. 3 to 1.7 V on 50Ω load at 10 Gbit/s. The on chip test shows that the highest working speed rate of circuit is 11 Gbit/s, with a total power consumption of about 77.4 mW. The chip size measures 0. 94 mm×1.25 mm. The circuit is suitable to STM-64 system after optimization.