CMOS红外传感器的模型研究

Research on CMOS infrared sensor model

对基于标准CMOS工艺的二极管型红外传感器进行物理建模和理论推导,并对所建模型进行了仿真。该红外传感器利用二极管两端的电压随温度变化特性来感测红外线。从电流与温度变化的关系着手,推导出电压与温度变化关系,对红外传感器的一些重要参量进行了讨论。仿真结果表明:所建模型基本与实验结果相符。

An infrared sensor based on a suspended p^＋-active/n-well diode fabricated in a standard CMOS process is studied. Its theoretical model is built and simulated. The infrared sensor detects the infrared light by measuring the diode junction voltage which varies with temperature. Starting with the relationship between electric current and temperature change, the relationship of voltage and temperature is deduced. Also some important parameters of the infrared senor are studied. Simulation results show that the model agrees with experimental results.