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3C-SiC短程结构的分子动力学模拟 被引量:1

The MD simulation of 3C-SiC short-range structure
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摘要 采用Tersoff势对晶态3C-SiC结构进行了NEV系综的分子动力学模拟,在合适的步数和步长下选用蛙跳法计算该体系的温度、径向分布函数和键角分布,模拟结果表明常温下3C-SiC晶体保持着长程有序闪锌矿结构。蛙跳法适用于NEV线性系综的计算模拟,而不适用于NTV等非线性系综的恒温分子动力学模拟。最后分析模拟过程中的“四位数灾难”是由积分误差累积所致。 The structure of 3C-SiC crystal with NEV ensemble was simulated by molecular dynamics, using the Tersoff Potentials. The temperature, the radial distributing function, and the band angles in different steps was simulated in condition of suitable steps and step length. The NEV ensemble was calculated by Leap-Frog Method. The results show that 3C-SiC was cubic zinc sulfide structure of long-distance order in room temperature. Furthermore, Leap-Frog Method was suitable for linear ensembles as NEV, not for NTV ensemble. The“Four-Digit Disasters”was due to the cumulations of the integral errors after analysis.
出处 《功能材料》 EI CAS CSCD 北大核心 2005年第8期1200-1203,共4页 Journal of Functional Materials
基金 湖北省新世纪教学改革重点资助项目(2001053)
关键词 分子动力学模拟 蛙跳法 Tersoff势 molecular dynamics Leap-Frog Method Tersoff potential
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  • 1PORTER L J, LI J, YIP S, et al. Atomistic modeling of finite-temperature properties of β-SiC: Ⅰ. Lattice vibrations, heat capacity, and thermal expansion. Journal of Nuclear Materials[J]. 1997, 246(1):53-59.
  • 2LI J, PORTER L J, YIP S, et al. Atomistic modeling of finite-temperature properties of crystalline β-SIC: Ⅱ. Thermal conductivity and effects of point defects[J]. Journal of Nuclear Materials, 1998, 255(2-3):139--152.
  • 3KOITZSCH C, CONRAD D, SCHEEBSCHMIDT K, et al. Empirical molecular dynamic study of SiC (0001) surface reconstructions and bonded interfaces[J]. J Appl Phys, 2000, 88:7104-7108.
  • 4TANG M, YIP S. Atomistic simulation of thermomechanical properties of β-SiC[J]. Phys Rev B, 1995, 52:15150-15159.
  • 5HUANG H, GHONIEM N M, WONG J K, et al. Molecular dynamics determination of defect energetics in beta-SiC using three representative empirical potentials[J]. Modelling Simul Mater Sci Eng, 1995, 3:615-627.
  • 6SHIMOJO F, EBBSJ? I, KALIA R K, et al. Molecular Dynamics Simulation of Structural Transformation in Silicon Carbide under Pressure[J]. Phys Rev Lett, 2000, 84:3338-3341.
  • 7PRADHAN P, RAY A K. A density functional study of the structures and energetics of small hetero-stomic silicon-carbon nanoclusters[J]. Journal of Molecular Structure: THEOCHEM, 2005, 716(1-3):109-130.
  • 8PRADHAN P, RAY A K. An ab initio study of the electronic and geometric structures of SimCn+ cationic nanoclusters[J]. Eur Phys J D, 2.006, 37:393-407.
  • 9MUHLHAUSER M, FROUDAKIS G, ZDETSIS A D, et al. Ab initio investigation of the stability of Si3C3 clusters and their structural and bonding features[J]. Z Phys D, 1994, 32:113-123.
  • 10ZDETSIS A D, FROUDAKIS G, M?HLH?USER hi, et al. Ab initio study of electronic, structural, and vibrational properties of the Si4C cluster[J]. J Chem Phys, 1996, 104(7):2566-2569.

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