摘要
分子束外延生长GaAlAs/GaAs量子阱材料时,适当的衬底温度和Ⅴ/Ⅲ束流比是改善AlGaAs材料生长质量的重要因素。对GaAs、GaAlAs材料的生长条件进行优化,获得了高质量的量子阱材料,有源层分别为8nm、10nm、12nm时,10K下的PL谱半峰宽(FWHM)分别为6.42meV、6.28meV、6.28meV。
The GaAlAs/GaAs material with gradient refraction index quantum well structure has been grown by MBE. On the base of AlGaAs, GaAs fundamental material growth, excellent materials by the substrate temperature and Ⅴ/Ⅲ flux ratio optimization were achieved. Spectral characteristics of the sample were studied with photoluminescence (PL) measurement. For 8 nm, 10 nm and 12 nm multiple quantum wells, the photoluminescence spectra at 10 K are characterized, the FWHM are 6.42 meV .6.28 meV and 6.28 meV, respectively.
出处
《光电子技术与信息》
2005年第4期23-25,共3页
Optoelectronic Technology & Information
基金
高功率半导体激光国家重点实验室基金(ZS3603)
