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双层有机电致发光器件AlQ厚度优化的研究 被引量：1

Optimization of AIQ Thickness in Double Layer Organic Light-emitting Devices
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摘要 采用真空蒸发法制备了双层结构(ITO/NPB(15nm)/AlQ(x)/Mg:Ag)有机电致发光器件(OLED)。测试分析了8-羟基喹啉铝(AlQ)厚度对OLED的B-V、J-V和η-V特性的影响,结果表明AlQ厚度对OLED器件的性能有显著的影响;当AlQ厚度在40nm时器件的发光亮度、发光效率以及稳定性都是最佳,但是当厚度变化时对光谱影响不大。 In the double layer OLED device,the structure of ITO/NPB（15 nm）/AlQ（x）/Mg：Ag was prepared in the vacuum. The thickness of tris-（8-hydroxyquinoline） aluminum influences the curve of J - V , B - Vand η- V by testing and analysing. The result expresses that the thickness of AlQ influences the performance of the OLED. At last in the 40 nm the brightness , efficiency and stability are the most perfect, but the thickness doesn＇t influence the spectrum.
作者 季兴桥 黎威智 钟志有 王涛 蒋亚东
机构地区 电子科技大学光电信息学院
出处 《光电子技术与信息》 2005年第4期26-28,共3页 Optoelectronic Technology & Information
基金 部级预研基金(51402040205)
关键词 8-羟基喹啉铝 OLED 厚度优化 tris-（8-hydroxyquinoline）aluminum organic light-emitting devices thickness optimization
分类号 TN386 [电子电信—物理电子学]
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参考文献11

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二级参考文献9

共引文献17

同被引文献10

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光电子技术与信息
2005年 第4期

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