传输矩阵法研究垂直腔半导体光放大器增益特性

Research of gain of vertical cavity semiconductor optical amplifiers based on transfer matrix method

利用传输矩阵法研究垂直腔半导体光放大器(VCSOAs)的增益及其带宽特性。研究了不同载流子浓度、DBR膜层数对增益特性的影响,发现了有源区内量子阱堆位置的改变将导致增益峰值波长移动。数值计算结果与实验结果相吻合。

The gain and bandwidth of vertical cavity semiconductor optical amplifiers （VCSOAs） were studied based on transfer matrix method. The different carrier density and layers number of DBR will affect the gain characteristic and the wavelength of the peak gain will shift with the variation of position of the quantum well stacks in active region. The result of calculation is agreement with the experiment。