摘要
A new mathematical method of measuring electron emission induced by low energy ions from solids is described and used to calculate secondary electron emission according to the recorded pulse-height spectra of ions and ultraviolet （UV） photons. Using the UV single secondary electron spectra, we predict the shape of many secondary electron distributions under consideration of detection efficiency of MCP detector. These calculated distributions allow us to characterize the secondary electrons yield, and to give a secondary electron distribution for measured data. It seems rather feasible to determine secondary electron yield emitted by low energy ions at very low ion uxes.
A new mathematical method of measuring electron emission induced by low energy ions from solids is described and used to calculate secondary electron emission according to the recorded pulse-height spectra of ions and ultraviolet （UV） photons. Using the UV single secondary electron spectra, we predict the shape of many secondary electron distributions under consideration of detection efficiency of MCP detector. These calculated distributions allow us to characterize the secondary electrons yield, and to give a secondary electron distribution for measured data. It seems rather feasible to determine secondary electron yield emitted by low energy ions at very low ion uxes.
